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| (R) ISL7124SRH Data Sheet September 2002 FN9090 Single-Event Hardened, Single Supply, Quad Operational Amplifier The single-event radiation hardened ISL7124SRH consists of four independent, high gain, internally frequency compensated operational amplifiers, specifically designed to operate from a single power supply over a wide range of voltages. The device is functionally equivalent to industry standard 124 types, offering improvements in supply current and power supply rejection ratio. Constructed with Intersil's dielectrically isolated, radiation hardened silicon gate (RSG) BiCMOS process, these devices are immune to single event latchup. Additionally, the design has been hardened to prevent single event transients (SETs) in excess of 1V for LETs up to 36MeV/mg/cm2. The ISL7124SRH has been specifically designed and manufactured to provide highly reliable performance in harsh radiation environments. It is total dose hardened to 300krad(Si) and offers guaranteed performance over the full -55C to +125C military temperature range. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-02542. A "hot-link" is provided on our website for downloading. Features * QML Qualified per MIL-PRF-38535 Requirements * Electrically Screened to DSCC SMD # 5962-02542 * Radiation Environment - Total Dose. . . . . . . . . . . . . . . . . . . . . . 300krad(Si)(Max) - Latch-Up Immune - SET Threshold (Delta Vo<1V) . . . 36MeV/mg/cm2(Min) * Single Supply Voltage Range (5V to 30V) * Input Common Mode Voltage Range Includes Ground * Input Offset Voltage . . . . . . . . . . . . . . . . . . +/-10mV(Max) * Input Offset Current . . . . . . . . . . . . . . . . . . +/-150nA(Max) * Input Bias Current . . . . . . . . . . . . . . . . . . . . . 400nA(Max) * Open Loop Voltage Gain . . . . . . . . . . . . . . . 20V/mV(Min) * Power Supply Rejection Ratio . . . . . . . . . . . . . .70dB(Min) * Common Mode Rejection Ratio . . . . . . . . . . . . .70dB(Min) * ESD (HBM) . . . . . . . . . . . . . . . . . . . . . . . . . . .3000V(Min) Applications * Single Supply Operation of Op-Amp Circuits * General Analog Signal Processing Ordering Information ORDERING NUMBER 5962F0254201VXC INTERNAL MKT. NUMBER ISL7124SRHVF ISL7124SRHQF ISL7124SRHF/Proto TEMP. RANGE (oC) -55 to 125 -55 to 125 -55 to 125 Pinout ISL7124SRHF (FLATPACK CDFP3-F14) TOP VIEW OUT 1 -IN 1 +IN 1 +VCC +IN 2 -IN 2 OUT 2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 OUT 4 -IN 4 +IN 4 -VCC +IN 3 -IN 3 OUT 3 5962F0254201QXC ISL7124SRHF/Proto 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright (c) Intersil Americas Inc. 2002. All Rights Reserved ISL7124SRH Die Characteristics DIE DIMENSIONS: 2640m x 5020m (104 mils x 198mils) Thickness: 483m 25.4m (19 mils 1 mil) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorous Silicon Glass) Thickness: 8.0kA 1.0kA Top Metallization: Type: AlSiCu Thickness: 16.0kA 2kA Substrate: Radiation Hardened Silicon Gate Dielectrically Isolated Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105 A/cm2 Transistor Count: 276 Metallization Mask Layout ISL7124SRH -VCC -IN 4 +IN 4 +IN 3 -IN 3 OUT 4 OUT 3 Layout not yet available. OUT 1 OUT 2 -IN 1 +IN 1 +IN 2 +VCC -IN 2 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 2 |
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